Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIRC04DP-T1-GE3

Description
Win Source Part Number: 1277657-SIRC04DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC04DP-T1-GE3DKR,S IRC04DP-T1-GE3CT,SIR C04DP-T1-GE3TR Base Product Number: SIRC04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277657-SIRC04DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC04DP-T1-GE3DKR,S IRC04DP-T1-GE3CT,SIR C04DP-T1-GE3TR Base Product Number: SIRC04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277657-SIRC04DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277657-SIRC04DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277657-SIRC04DP-T1-GE3
Win Source Part Number: 1277657-SIRC04DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC04DP-T1-GE3DKR,S IRC04DP-T1-GE3CT,SIR C04DP-T1-GE3TR Base Product Number: SIRC04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277657-SIRC04DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Schottky Diode (Body)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 50W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRC04DP-T1-GE3DKR,SIRC04DP-T1-GE3CT,SIRC04DP-T1-GE3TR
Base Product Number: SIRC04
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIRC04DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRC04DP-T1-GE3CT-ND
Single FETs, MOSFETs SIRC04DP-T1-GE3CT-ND
N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRC04DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRC04DP-T1-GE3TR-ND
Single FETs, MOSFETs SIRC04DP-T1-GE3TR-ND
N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRC04DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRC04DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIRC04DP-T1-GE3DKR-ND
N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 60A (Tc) 50W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAK SO-8

MOSFET 30V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay - 81AC2785 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay
81AC2785
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay 81AC2785
MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRC04DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRC04DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRC04DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8

MOSFET N-CH 30V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277657-SIRC04DP-T1-GE3 SIRC04DP-T1-GE3CT-ND SIRC04DP-T1-GE3 81AC2785 SIRC04DP-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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