Win Source Part Number: 990219-SIRA90DP-T1-R
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 104W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA90DP-T1-RE3DKR,S
Base Product Number: SIRA90
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO EP T/R Product overview: SIRA90DP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA90DP-T1-RE3 can be used for catalog matching and distributor lookup.
MOSFET N-Channel 30V 100A PowerPAK SO8
MOSFET N-Channel 30V 100A PowerPAK SO8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 30V 100A PPAK SO-8
MOSFET N-CH 30V 100A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 990219-SIRA90DP-T1-RE3 | 278-SIRA90DP-T1-RE3 | 1349698P | 1349165 | SIRA90DP-T1-RE3DKR-ND | SIRA90DP-T1-RE3 | SIRA90DP-T1-RE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 30V 100A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 104000 milliwatts | 6250 milliwatts | 104000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3 | Tape and Reel | SO-8; SO-8 | So | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 |
| MOSFET Operating Mode | Enhancement | Enhancement |
