N-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 895088-SIRA88DP-T1-G
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 45.5A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIRA88
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIRA88DP-T1-GE3TR, SIRA88DP-T1-GE3DKR, SIRA88DP-T1-GE3CT
Trans MOSFET N-CH 30V 45.5A 8-Pin PowerPAK SO EP T/R Product overview: SIRA88DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 45.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 45.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA88DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 30V, 45.5A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:45.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 30V 45.5A PPAK SO-8
MOSFET N-CH 30V 45.5A PPAK SO-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIRA88DP-T1-GE3TR-ND | 895088-SIRA88DP-T1-GE3 | 278-SIRA88DP-T1-GE3 | 15AC8635 | SIRA88DP-T1-GE3 | SIRA88DP-T1-GE3 | SIRA88DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA88DP-T1-GE3 | 30V 45.5A MOSFET Transistor | Mosfet, N-Ch, 30V, 45.5A, Powerpak So; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK® SO-8 | Tape and Reel | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts |
