MOSFET N-CH 20V 60A PPAK SO-8
N-Channel 20V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028767-SIR866DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 4730pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SI7866ADP-T1-E3; SI7866ADP-T1-GE3; SiR800DP-T1-GE3; SiR866DP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
N-Channel MOSFET, 20V, 60A, 1.9mR, Surface Mount, PowerPAK-SO-8 Product overview: SIR866DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR866DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 60A PPAK SO-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIR866DP-T1-GE3 | SIR866DP-T1-GE3TR-ND | 028767-SIR866DP-T1-GE3 | 278-SIR866DP-T1-GE3 | SIR866DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR866DP-T1-GE3 | N-Channel SMD 20V 60A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 60000 milliamps |