Vishay Intertechnology, Inc. Single FETs, MOSFETs SIR866DP-T1-GE3

Description
MOSFET N-CH 20V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 20V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIR866DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR866DP-T1-GE3
Single FETs, MOSFETs SIR866DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8

MOSFET N-CH 20V 60A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR866DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR866DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR866DP-T1-GE3TR-ND
N-Channel 20V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR866DP-T1-GE3 - 028767-SIR866DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR866DP-T1-GE3
028767-SIR866DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR866DP-T1-GE3 028767-SIR866DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028767-SIR866DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 107nC @ 10V Max Input Capacitance: 4730pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.9 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SI7866ADP-T1-E3; SI7866ADP-T1-GE3; SiR800DP-T1-GE3; SiR866DP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028767-SIR866DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 4730pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SI7866ADP-T1-E3; SI7866ADP-T1-GE3; SiR800DP-T1-GE3; SiR866DP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel SMD 20V 60A MOSFET Transistor
278-SIR866DP-T1-GE3
N-Channel SMD 20V 60A MOSFET Transistor 278-SIR866DP-T1-GE3
N-Channel MOSFET, 20V, 60A, 1.9mR, Surface Mount, PowerPAK-SO-8 Product overview: SIR866DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR866DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 20V, 60A, 1.9mR, Surface Mount, PowerPAK-SO-8 Product overview: SIR866DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR866DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR866DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR866DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR866DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8

MOSFET N-CH 20V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIR866DP-T1-GE3 SIR866DP-T1-GE3TR-ND 028767-SIR866DP-T1-GE3 278-SIR866DP-T1-GE3 SIR866DP-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR866DP-T1-GE3 N-Channel SMD 20V 60A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 60000 milliamps
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