Trans MOSFET N-CH 80V 19.8A 8-Pin PowerPAK SO EP T/R Product overview: SIR826BDP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 19.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 19.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR826BDP-T1-RE3
N-Channel 80V 19.8A (Ta), 80.8A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 19.8A (Ta), 80.8A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 19.8A (Ta), 80.8A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1003609-SIR826BDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIR826BDP-T1-RE3DKR,
Base Product Number: SIR826
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET, N-CH, 80V, 80.8A, 150DEG C, 83W; Transistor Polarity:N Channel; Continuous Drain Current Id:80.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.00435ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; RoHS Compliant: Yes
MOSFET N-CH 80V 19.8A/80.8A PPAK
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR826BDP-T1-RE3 | SIR826BDP-T1-RE3CT-ND | 1003609-SIR826BDP-T1-RE3 | 99AC0540 | SIR826BDP-T1-RE3 | SIR826BDP-T1-RE3 |
| Product Name | 80V 19.8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 80V, 80.8A, 150Deg C, 83W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts | |||||
| Transconductance | 0.0650 kS | |||||
| PD | 83 milliwatts | 5000 to 83000 milliwatts |
