Manufacturer: Vishay
Win Source Part Number: 113737-SIR640ADP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Family Name: SiR640ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 4240pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SM033NB04LCR RLG; TSM020N04LCR RLG; TSM033NB04LCR RLG;
Introduction Date: June 25, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-CH MOSFET 40V 60A 2mR Surface Mount Product overview: SIR640ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR640ADP-T1-GE3
MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 40V 41.6A/100A PPAK
MOSFET N-CH 40V 41.6A/100A PPAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 113737-SIR640ADP-T1-GE3 | SIR640ADP-T1-GE3TR-ND | 278-SIR640ADP-T1-GE3 | 01AC4969 | SIR640ADP-T1-GE3 | SIR640ADP-T1-GE3 | SIR640ADP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR640ADP-T1-GE3 | Single FETs, MOSFETs | SMD 40V 60A MOSFET Transistor | Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 6250 to 104000 milliwatts | 104000 milliwatts | 6250 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 |
