Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3 SIR440DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096472-SIR440DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.55 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1096472-SIR440DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.55 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3 - 1096472-SIR440DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3
1096472-SIR440DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3 1096472-SIR440DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096472-SIR440DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.55 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096472-SIR440DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 6000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.55 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SIR440DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR440DP-T1-GE3
Single FETs, MOSFETs SIR440DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8

MOSFET N-CH 20V 60A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR440DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR440DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR440DP-T1-GE3DKR-ND
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR440DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR440DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR440DP-T1-GE3TR-ND
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR440DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR440DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR440DP-T1-GE3CT-ND
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V Vds 20V Vgs PowerPAK SO-8

MOSFET 20V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR440DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR440DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR440DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8

MOSFET N-CH 20V 60A PPAK SO-8

Supplier's Site
Mosfet, N Ch, 20V, 60A, Powerpak So; Transistor Polarity Vishay - 97W2607 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 20V, 60A, Powerpak So; Transistor Polarity Vishay
97W2607
Mosfet, N Ch, 20V, 60A, Powerpak So; Transistor Polarity Vishay 97W2607
MOSFET, N CH, 20V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

MOSFET, N CH, 20V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096472-SIR440DP-T1-GE3 SIR440DP-T1-GE3 SIR440DP-T1-GE3DKR-ND SIR440DP-T1-GE3 SIR440DP-T1-GE3 97W2607
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 20V, 60A, Powerpak So; Transistor Polarity Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 6250 to 104000 milliwatts 6250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8 TO-3
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5 suppliers