N-CH MOSFET 20V 60A 1.55mR Surface Mount Product overview: SIR440DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR440DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 60A PPAK SO-8
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1096472-SIR440DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 6000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.55 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET 20V Vds 20V Vgs PowerPAK SO-8
MOSFET, N CH, 20V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N-CH 20V 60A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIR440DP-T1-GE3 | SIR440DP-T1-GE3 | SIR440DP-T1-GE3DKR-ND | 1096472-SIR440DP-T1-GE3 | SIR440DP-T1-GE3 | 97W2607 | SIR440DP-T1-GE3 |
| Product Name | SMD 20V 60A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR440DP-T1-GE3 | MOSFET | Mosfet, N Ch, 20V, 60A, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 6250 milliwatts | 6250 milliwatts | 6250 to 104000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts |
