Vishay Precision Group 25V 40A MOSFET Transistor SIR436DP-T1-GE3

MOSFET N-CH 25V 40A PPAK SO-8 Product overview: SIR436DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR436DP-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 726932-SIR436DP-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SiR436DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 25V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1715pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 5W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRFH4234TRPbF; DMT2004UPS-13; CSD16342Q5A;
Introduction Date: November 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

N-Channel 25V 40A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8