Manufacturer: Vishay
Win Source Part Number: 1096469-SIR418DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Family Name: SiR418DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2410pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): GKI04048; BSC054N04NSGXT; BSC059N04LS G; BSC059N04LSGXT;
Introduction Date: September 15, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET N-CH 40V 40A PPAK SO-8
N-Channel MOSFET, 40V, 40A, 5mR Rds On, Surface Mount Product overview: SIR418DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR418DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 40A (Tc) 39W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 40A (Tc) 39W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 40A (Tc) 39W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
N CHANNEL MOSFET, 40V, 40A; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; No. of Pins:8PinsRoHS Compliant: Yes
N CHANNEL MOSFET, 40V, 40A; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET N-CH 40V 40A PPAK SO-8
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096469-SIR418DP-T1-GE3 | SIR418DP-T1-GE3 | 278-SIR418DP-T1-GE3 | SIR418DP-T1-GE3DKR-ND | SIR418DP-T1-GE3 | 35R6197 | SIR418DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR418DP-T1-GE3 | Single FETs, MOSFETs | N-Channel SMD 40V 40A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 40V, 40A; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 5000 to 39000 milliwatts | 39000 milliwatts | 39000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
