N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277644-SIR186DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 57W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIR186DP-T1-RE3DKR,S
Base Product Number: SIR186
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Power Field-Effect Transistor, Product overview: SIR186DP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR186DP-T1-RE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 60A PPAK SO-8
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET, N-CH, 60V, 60A, 150DEG C, 57W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.6V RoHS Compliant: Yes
N-CHANNEL 60-V (D-S) MOSFET
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIR186DP-T1-RE3DKR-ND | 1277644-SIR186DP-T1-RE3 | 278-SIR186DP-T1-RE3 | SIR186DP-T1-RE3 | SIR186DP-T1-RE3 | 37AC0918 | 26AK9904 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Channel Type Vishay | N-Channel 60-V (D-S) Mosfet Vishay |
| Polarity | N-Channel | N-Channel | N-Channel |
