Vishay Intertechnology, Inc. 45V 36A MOSFET Transistor SIJ450DP-T1-GE3

Trans MOSFET N-CH 45V 36A T/R Product overview: SIJ450DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 45V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ450DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 45V 36A (Ta), 113A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 996797-SIJ450DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIJ450DP-T1-GE3CT,742-SIJ450DP-T1-GE3TR,742-SIJ450DP-T1-GE3DKR
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V