Trans MOSFET N-CH 60V 23A 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SIJ186DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ186DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1339378-SIJ186DP-T1-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 5W (Ta) , 57W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIJ186
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta) , 79.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
MOSFET 60V Vds 20V Vgs PowerPAK SO-8L
MOSFET N-CH 60V 23A/79.4A PPAK
MOSFET, N-CH, 79.4A, 60V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:79.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 23A/79.4A PPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIJ186DP-T1-GE3 | SIJ186DP-T1-GE3TR-ND | 1339378-SIJ186DP-T1-GE3 | SIJ186DP-T1-GE3 | SIJ186DP-T1-GE3 | 99AC9565 | SIJ186DP-T1-GE3 |
| Product Name | 60V 23A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 79.4A, 60V, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 5000 milliwatts | 5000 to 57000 milliwatts | 5000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape and Reel | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 |
