N-Channel 80V 10.2A (Ta), 25.5A (Tc) 3.6W (Ta), 22.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 10.2A (Ta), 25.5A (Tc) 3.6W (Ta), 22.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 10.2A (Ta), 25.5A (Tc) 3.6W (Ta), 22.3W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, Product overview: SIJ128LDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIJ128LDP-T1-GE
Win Source Part Number: 1277594-SIJ128LDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIJ128LDP-T1-GE3
Base Product Number: SIJ128
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 80V 10.2A/25.5A PPAK
MOSFET, N-CH, 80V, 25.5A, POWERPAK SO ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIJ128LDP-T1-GE3DKR-ND | 2088-SIJ128LDP-T1-GE3 | 1277594-SIJ128LDP-T1-GE3 | SIJ128LDP-T1-GE3 | 77AH0227 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 25.5A, Powerpak So Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel |
