Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHW22N65E-GE3

The SiHW22N65E is an N-channel MOSFET designed for high-voltage switching applications such as server and telecom power supplies, SMPS, PFC, and renewable energy systems. It is packaged in a TO-247AD case with dimensions of 20.80 to 21.46 mm in length, 15.49 to 16.26 mm in width, and 4.70 to 5.31 mm in height. The device features a drain-source voltage rating of 650 V, a maximum continuous drain current of 22 A at 25 °C, and a drain-source on-state resistance of 0.18 Ω at 10 V gate-source voltage. It supports a single pulse avalanche energy of 691 mJ and has a maximum power dissipation of 227 W. The gate charge is 110 nC maximum, with gate-source charge of 15 nC and gate-drain charge of 32 nC. The junction-to-case thermal resistance is 0.55 °C/W. The part is lead-free and halogen-free, compliant with RoHS standards.