Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3 SIHU7N60E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096443-SIHU7N60E-GE 3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 680pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3 - 1096443-SIHU7N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 742-SIHU7N60E-GE3-ND - DigiKey
    DigiKey
  • Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay - 63W4120 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHU7N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096443-SIHU7N60E-GE 3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 680pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3 - 1096443-SIHU7N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3
1096443-SIHU7N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3 1096443-SIHU7N60E-GE3
Manufacturer: Vishay Win Source Part Number: 1096443-SIHU7N60E-GE 3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 680pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096443-SIHU7N60E-GE3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 680pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-SIHU7N60E-GE3
MOSFET Transistor 278-SIHU7N60E-GE3
TRANSISTOR POWER, FET, FET General Purpose Power Product overview: SIHU7N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU7N60E-GE3 can be used for catalog matching and distributor lookup.

TRANSISTOR POWER, FET, FET General Purpose Power Product overview: SIHU7N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU7N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 742-SIHU7N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHU7N60E-GE3-ND
Single FETs, MOSFETs 742-SIHU7N60E-GE3-ND
N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-251AA

N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-251AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHU7N60E-GE3
MOSFET SIHU7N60E-GE3
MOSFET 600V Vds 30V Vgs IPAK (TO-251)

MOSFET 600V Vds 30V Vgs IPAK (TO-251)

Buy Now Datasheet
Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay - 63W4120 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay
63W4120
Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay 63W4120
Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes

Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHU7N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHU7N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHU7N60E-GE3
MOSFET N-CH 600V 7A IPAK

MOSFET N-CH 600V 7A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 1096443-SIHU7N60E-GE3 278-SIHU7N60E-GE3 742-SIHU7N60E-GE3-ND SIHU7N60E-GE3 63W4120 SIHU7N60E-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU7N60E-GE3 MOSFET Transistor Single FETs, MOSFETs MOSFET Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 78000 milliwatts 78000 milliwatts
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