Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHR085N60EF-T1GE3

The SiHR085N60EF is an N-channel MOSFET designed for high-efficiency power conversion in server, telecom, SMPS, PFC, lighting, industrial, and solar applications. It is packaged in a PowerPAK 8 x 8LR case, featuring a Kelvin source connection for reduced switching losses. The device has a drain-source voltage rating of 600 V, a typical on-resistance of 0.075 Ω at 10 V gate drive, and a maximum gate charge of 63 nC. It is rated for a continuous drain current of 32 A at 150 °C junction temperature and a maximum power dissipation of 184 W. The MOSFET supports avalanche energy up to 173 mJ and operates from -55 °C to 150 °C. The integrated body diode has a forward voltage of up to 1.2 V at 17 A and a reverse recovery time up to 218 ns. Junction-to-case thermal resistance is 0.25 °C/W.