N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-220AB
Manufacturer: Vishay Siliconix
Win Source Part Number: 812183-SIHP7N60E-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 78W (Tc)
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 600mOhm at 3.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 100V
Current - Continuous Drain (Id) at 25°C: 7A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V
600V 7A N-CH MOSFET TO-220 Power Transistor Product overview: SIHP7N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP7N60E-GE3 can be used for catalog matching and distributor lookup.
Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET, N CH, 600V, 7A, TO-220AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 600V, 7A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET N-CH 600V 7A TO220AB
MOSFET N-CH 600V 7A TO220AB
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP7N60E-GE3-ND | 812183-SIHP7N60E-GE3 | 278-SIHP7N60E-GE3 | 62W0522 | 68W7072 | 68W7071 | SIHP7N60E-GE3 | SIHP7N60E-GE3 | SIHP7N60E-GE3 |
| Product Name | Single FETs, MOSFETs | FETs - Single - SIHP7N60E-GE3 | 600V 7A TO-220 MOSFET Transistor | Power Mosfet, N Channel, 7 A, 600 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay | Mosfet, N Ch, 600V, 7A, To-220Ab-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 600V, 7A, To-220Ab-3; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-3 | TO-3; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | ||
| PD | 78000 milliwatts | 78000 milliwatts | 78000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
