Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP25N60EFL-BE3

N-Channel MOSFET in TO-220AB package with a 600 V drain-source voltage rating, 0.127 Ω typical on-state resistance at 10 V gate-source voltage, and a maximum continuous drain current of 25 A at 25 °C. Features a fast body diode with reverse recovery time up to 276 ns and avalanche energy rating of 353 mJ. Maximum power dissipation is 250 W, with junction-to-case thermal resistance of 0.5 °C/W and junction-to-ambient of 62 °C/W. Operating temperature range is -55 °C to +150 °C. Designed for applications including telecommunications, server power supplies, industrial welding, and renewable energy inverters.