MOSFET N-CH 600V 15A TO220AB Product overview: SIHP15N60E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP15N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 211710-SIHP15N60E-GE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1350pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-220AB
MOSFET N-CH 600V 15A TO220AB
MOSFET, N CH, 600V, 15A, TO-220AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 600V, 15A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:-RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs TO-220AB
VISHAY SIHP15N60E-GE3 Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 278-SIHP15N60E-GE3 | 211710-SIHP15N60E-GE3 | SIHP15N60E-GE3-ND | SIHP15N60E-GE3 | 68W7062 | 68W7061 | SIHP15N60E-GE3 | 880-SIHP15N60E-GE3 |
| Product Name | 600V 15A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP15N60E-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 600V, 15A, To-220Ab-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 600V, 15A, To-220Ab-3; Channel Type Vishay | MOSFET | VISHAY SIHP15N60E-GE3 Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| PD | 180 milliwatts | 180000 milliwatts | 180000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | Tube | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3; TO-220 |
