Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP10N40D-E3

Description
N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SIHP10N40D-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP10N40D-E3-ND
Single FETs, MOSFETs SIHP10N40D-E3-ND
N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB

N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP10N40D-E3 - 1096435-SIHP10N40D-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP10N40D-E3
1096435-SIHP10N40D-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP10N40D-E3 1096435-SIHP10N40D-E3
Manufacturer: Vishay Win Source Part Number: 1096435-SIHP10N40D-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 526pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096435-SIHP10N40D-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 526pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP10N40D-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP10N40D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP10N40D-E3
MOSFET N-CH 400V 10A TO220AB

MOSFET N-CH 400V 10A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 400V Vds 30V Vgs TO-220AB

MOSFET 400V Vds 30V Vgs TO-220AB

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHP10N40D-E3-ND 1096435-SIHP10N40D-E3 SIHP10N40D-E3 SIHP10N40D-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP10N40D-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 400 volts
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