Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP100N65E-GE3

The SiHP100N65E is an N-channel MOSFET designed for high-efficiency power conversion in server, telecom, and industrial applications, featuring 650 V drain-source voltage rating and a TO-220AB package. It has a typical on-state resistance of 0.087 Ω at 10 V gate-source voltage and 12 A drain current, with a total gate charge of up to 62 nC. The device includes a Kelvin source connection to reduce gate noise and is rated for 127 mJ of single-pulse avalanche energy. Maximum power dissipation is 208 W with a junction-to-case thermal resistance of 0.6 °C/W. The operating junction and storage temperature range is -55 to +150 °C, and it is lead-free and halogen-free.