Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs SIHP065N60E-GE3

Win Source Part Number: 1356570-SIHP065N60E-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: E
Package: Tube
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Product Number: SIHP065
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
ECCN: EAR99

N-Channel 600V 40A (Tc) 250W (Tc) Through Hole TO-220AB

Power Field-Effect Transistor Product overview: SIHP065N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP065N60E-GE3 can be used for catalog matching and distributor lookup.