N-Channel 600V 40A (Tc) 250W (Tc) Through Hole TO-220AB
Win Source Part Number: 1356570-SIHP065N60E-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: E
Package: Tube
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Product Number: SIHP065
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
ECCN: EAR99
MOSFET N-CH 600V 40A TO220AB
POWER MOSFET, N CHANNEL, 40A, 600V; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs TO-220AB
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP065N60E-GE3-ND | 1356570-SIHP065N60E-GE3 | SIHP065N60E-GE3 | 15AC8633 | SIHP065N60E-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Power Mosfet, N Channel, 40A, 600V; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-3 | |
| PD | 250000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
