Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHLR110TR-GE3

The IRLR110, IRLU110, SiHLR110, and SiHLU110 are N-channel power MOSFETs designed for switching applications with logic-level gate drive. The SiHLR110TR-GE3 is a surface-mount variant in the DPAK (TO-252) package, with a maximum drain-source voltage of 100 V, a drain-source on-resistance of 0.54 Ω at V GS = 5.0 V, and a continuous drain current of 4.3 A at T C = 25 °C. It supports repetitive avalanche operation with 2.5 mJ of energy and has a maximum junction-to-ambient thermal resistance of 110 °C/W for surface mounting. The device is lead-free, halogen-free, and meets AEC-Q200 qualification standards.