The IRL640S and SiHL640S are N-channel MOSFETs designed for high-current switching applications with logic-level gate drive. The SiHL640STRL-GE3 is supplied in a D2PAK (TO-263) surface-mount package, with a maximum drain-source voltage of 200 V, a maximum on-resistance of 0.18 Ω at V<sub>GS</sub> = 5 V, and a continuous drain current rating of 11 A at T<sub>C</sub> = 100 °C. It features repetitive avalanche capability, a single-pulse avalanche energy of 580 mJ, and a maximum power dissipation of 3.1 W when mounted on a 1" square PCB. The device supports fast switching with a total gate charge of 66 nC and meets RoHS-compliant and halogen-free requirements.
LOGIC MOSFET N-CHANNEL 200V
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 742-SIHL640STRL-GE3TR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
