Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL050N65SF-GE3

The SiHL050N65SF-GE3 is a 650 V N-channel MOSFET in a TO-247AD 4L package, designed for high-efficiency switching applications such as server power supplies, PFC circuits, and industrial motor drives. It features a typical on-state resistance of 0.045 Ω at 25 °C and a total gate charge of up to 212 nC. The device is rated for continuous drain current of 40 A at 100 °C case temperature and supports single-pulse avalanche energy up to 793 mJ. It operates with a junction and storage temperature range of -55 °C to +150 °C, and meets RoHS and halogen-free material standards. Thermal resistance from junction to case is 0.24 °C/W maximum.