Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL041N65SF-GE3

The SiHL041N65SF is a single N-channel MOSFET with a 650 V drain-source voltage rating, designed for high-efficiency switching applications such as server and telecom power supplies, PFC, and industrial motor drives. It is housed in a TO-247AD 4L package and features a typ. on-resistance of 0.037 Ω at 10 V gate drive, a total gate charge of 252 nC, and an avalanche energy rating of 1142 mJ. The device includes a fast body diode with a reverse recovery time of up to 330 ns and supports continuous drain current up to 47 A at 150 °C junction temperature. Maximum power dissipation is 595 W, with a junction-to-case thermal resistance of 0.21 °C/W.