Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHH240N65E-T1-GE3

The SiHH240N65E is an N-channel MOSFET designed for high-efficiency power conversion in server, telecom, and industrial applications. It is packaged in a PowerPAK® 8 x 8 case measuring 8.00 mm x 8.00 mm with a height of 1.00 mm. The device has a drain-source voltage rating of 650 V, a continuous drain current of 9 A at 100 °C case temperature, and a pulsed drain current of 33 A. Its on-state resistance is 0.208 Ω at 25 °C and 10 V gate drive, with a total gate charge of 29 nC. The MOSFET features a Kelvin source connection to reduce gate noise and is rated for 36 mJ of single-pulse avalanche energy. It meets RoHS standards and is halogen-free. The operating junction and storage temperature range is -55 °C to +150 °C, with a maximum junction-to-case thermal resistance of 1.1 °C/W and junction-to-ambient thermal resistance of 55 °C/W.