Power Field-Effect Transistor, Product overview: SIHH120N60E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH120N60E-T1-G
N-Channel 600V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8
Win Source Part Number: 1277771-SIHH120N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHH120N60E-T1-GE3TR
Base Product Number: SIHH120
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 24A PPAK 8 X 8
MOSFET 600V Vds; +/-30V Vgs PowerPAK 8x8
MOSFET, N-CH, 600V, 24A, 150DEG C, 156W; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHH120N60E-T1-GE3 | SIHH120N60E-T1-GE3CT-ND | 1277771-SIHH120N60E-T1-GE3 | SIHH120N60E-T1-GE3 | SIHH120N60E-T1-GE3 | 99AC0537 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 24A, 150Deg C, 156W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel |
