Vishay Precision Group Single FETs, MOSFETs SIHH105N60EF-T1GE3

N-Channel 600V 26A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 600V 26A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 600V 26A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8

Trans MOSFET N-CH 600V 26A T/R Product overview: SIHH105N60EF-T1GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH105N60EF-T1GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1093064-SIHH105N60EF-T1GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHH105N60EF-T1GE3CT,742-SIHH105N60EF-T1GE3TR,742-SIHH105N60EF-T1GE3DKR
Drive Voltage (Max Rds On, Min Rds On): 10V