Power Field-Effect Transistor, Product overview: SIHH100N60E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH100N60E-T1-G
Manufacturer: Vishay
Win Source Part Number: 894990-SIHH100N60E-T
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIHH100
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 8 x 8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHH100N60E-T1-GE3DK
N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
MOSFET 650V Vds; 30V Vgs PowerPAK 8x8
MOSFET, N-CH, 600V, 28A, 150DEG C, 174W; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 28A PPAK 8 X 8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHH100N60E-T1-GE3 | 894990-SIHH100N60E-T1-GE3 | SIHH100N60E-T1-GE3DKR-ND | SIHH100N60E-T1-GE3 | 99AC0536 | SIHH100N60E-T1-GE3 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHH100N60E-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 28A, 150Deg C, 174W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PowerPAK® 8 x 8 | 8-PowerTDFN | TO-3 | 1850 pF @ 100 V |
