Manufacturer: Vishay
Win Source Part Number: 1040689-SIHG47N65E-G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 273nC @ 10V
Max Input Capacitance: 5682pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 72 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
650V 47A N-Channel MOSFET, 72mR RdsOn, TO-247-3 Product overview: SIHG47N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N65E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AC
MOSFET, N-CH, 650V, 47A, TO-247AC ROHS COMPLIANT: YES
MOSFET N-CH 650V 47A TO247AC
MOSFET 650V Vds 30V Vgs TO-247AC
MOSFET N-CH 650V 47A TO247AC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1040689-SIHG47N65E-GE3 | 278-SIHG47N65E-GE3 | 1807734P | 742-SIHG47N65E-GE3-ND | 26AK5799 | SIHG47N65E-GE3 | SIHG47N65E-GE3 | SIHG47N65E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N65E-GE3 | N-Channel 650V 47A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 47A, To-247Ac Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| PD | 417000 milliwatts | 417000 milliwatts | 417000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
