Manufacturer: Vishay Siliconix
Win Source Part Number: 716211-SIHG47N60EF-G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 379W
Popularity: Low
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 47A
Rds On (Maximum) at Id, Vgs: 67mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 225nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 4854pF at 100V
MOSFET N-CH 600V 47A TO247AC
600V 47A N-Channel MOSFET TO-247-3 Product overview: SIHG47N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N60EF-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC
MOSFET, N CHANNEL, 600V, 47A, TO247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3
MOSFET N-CH 600V 47A TO247AC
600V 47A 67mΩ@10V,24A 379W 4V@250uA N Channel TO-247AC MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Insulated Gate Bipolar Transistors (IGBT) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 716211-SIHG47N60EF-GE3 | SIHG47N60EF-GE3 | 1807913 | 278-SIHG47N60EF-GE3 | SIHG47N60EF-GE3-ND | 99W9489 | SIHG47N60EF-GE3 | SIHG47N60EF-GE3 | 17930-SIHG47N60EF-GE3 |
| Product Name | FETs - Single - SIHG47N60EF-GE3 | Single FETs, MOSFETs | IGBTs | N-Channel 600V 47A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Channel, 600V, 47A, To247Ac-3; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 600V 47A 67mΩ@10V,24A 379W 4V@250uA N Channel TO-247AC MOSFETs ROHS |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 379000 milliwatts | 379000 milliwatts | 379000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | -55 C (-67 F) |
