N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC
MOSFET N-CH 500V 30A TO247AC Product overview: SIHG32N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG32N50D-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1249910-SIHG32N50D-G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Family Name: SiHG32N50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2550pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 390W (Tc)
Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): APT5015BLC; STW20NM50FD; STW19NM50N;
Introduction Date: August 20, 2012
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET Transistor, N Channel, 30 A, 500 V, 0.125 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 30A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET 500V Vds 30V Vgs TO-247AC
MOSFET N-CH 500V 30A TO247AC
MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | SIHG32N50D-GE3-ND | 278-SIHG32N50D-GE3 | 1249910-SIHG32N50D-GE3 | 63W4112 | 99W9486 | SIHG32N50D-GE3 | SIHG32N50D-GE3 | 55113083 |
| Product Name | Single FETs, MOSFETs | 500V 30A MOSFET Transistor | Electrical Parts - SIHG32N50D-GE3 | Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant Vishay | Mosfet, N Channel, 500V, 30A, To-247Ac-3; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | Tube | TO-247; SOT3 | TO-3 | TO-3; TO-247 | TO-247; TO-247-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||
| PD | 390 milliwatts | 390000 milliwatts |
