Vishay Precision Group Single FETs, MOSFETs SIHG32N50D-GE3

Description
N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHG32N50D-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG32N50D-GE3-ND
Single FETs, MOSFETs SIHG32N50D-GE3-ND
N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC

N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Electrical Parts - SIHG32N50D-GE3 - 1249910-SIHG32N50D-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Electrical Parts - SIHG32N50D-GE3
1249910-SIHG32N50D-GE3
Electrical Parts - SIHG32N50D-GE3 1249910-SIHG32N50D-GE3
Manufacturer: Vishay Win Source Part Number: 1249910-SIHG32N50D-G E3 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Family Name: SiHG32N50D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-247AC Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2550pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 390W (Tc) Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): APT5015BLC; STW20NM50FD; STW19NM50N; Introduction Date: August 20, 2012 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1249910-SIHG32N50D-GE3
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Family Name: SiHG32N50D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2550pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 390W (Tc)
Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): APT5015BLC; STW20NM50FD; STW19NM50N;
Introduction Date: August 20, 2012
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
500V 30A MOSFET Transistor
278-SIHG32N50D-GE3
500V 30A MOSFET Transistor 278-SIHG32N50D-GE3
MOSFET N-CH 500V 30A TO247AC Product overview: SIHG32N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG32N50D-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 30A TO247AC Product overview: SIHG32N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG32N50D-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs TO-247AC

MOSFET 500V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant Vishay - 63W4112 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant Vishay
63W4112
Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant Vishay 63W4112
MOSFET Transistor, N Channel, 30 A, 500 V, 0.125 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 30 A, 500 V, 0.125 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 500V, 30A, To-247Ac-3; Channel Type Vishay - 99W9486 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 30A, To-247Ac-3; Channel Type Vishay
99W9486
Mosfet, N Channel, 500V, 30A, To-247Ac-3; Channel Type Vishay 99W9486
MOSFET, N CHANNEL, 500V, 30A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 30A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 55113083 - Radwell International
Willingboro, NJ, United States
Transistor
55113083
Transistor 55113083
MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG32N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG32N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG32N50D-GE3
MOSFET N-CH 500V 30A TO247AC

MOSFET N-CH 500V 30A TO247AC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number SIHG32N50D-GE3-ND 1249910-SIHG32N50D-GE3 278-SIHG32N50D-GE3 SIHG32N50D-GE3 63W4112 99W9486 55113083 SIHG32N50D-GE3
Product Name Single FETs, MOSFETs Electrical Parts - SIHG32N50D-GE3 500V 30A MOSFET Transistor MOSFET Mosfet Transistor, N Channel, 30 A, 500 V, 0.125 Ohm, 10 V, 3 V Rohs Compliant Vishay Mosfet, N Channel, 500V, 30A, To-247Ac-3; Channel Type Vishay Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 Tube TO-3 TO-3; TO-247 TO-247; TO-247-3
QG 96 nC
PD 390000 milliwatts 390 milliwatts
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