MOSFET N-Ch 600V 29A Low FOM TO247AC
Manufacturer: Vishay
Win Source Part Number: 1040505-SIHG30N60E-G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 2600pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC
600V 29A N-Channel MOSFET TO-247AC Product overview: SIHG30N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG30N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 29A TO247AC
Power MOSFET, N Channel, 29 A, 600 V, 0.104 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 29A TO247AC
| RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1452157 | 1040505-SIHG30N60E-GE3 | SIHG30N60E-GE3-ND | 278-SIHG30N60E-GE3 | SIHG30N60E-GE3 | 19X1940 | SIHG30N60E-GE3 | SIHG30N60E-GE3 |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG30N60E-GE3 | Single FETs, MOSFETs | N-Channel 600V 29A MOSFET Transistor | Single FETs, MOSFETs | Power Mosfet, N Channel, 29 A, 600 V, 0.104 Ohm, 10 V, 2 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | TO-247; To-247ac | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 | ||
| Number of units in IC | 1 | |||||||
| V(BR)DSS | 600 volts | 600 volts |
