Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG28N65E-GE3

The SiHG28N65E is an N-channel MOSFET designed for high-efficiency power conversion in server, telecom, and industrial applications, housed in a TO-247AC package. It has a drain-source voltage rating of 650 V, a maximum continuous drain current of 28 A at 25 °C, and a drain-source on-state resistance of up to 0.122 Ω at 10 V gate-source voltage. The device features a low total gate charge of 140 nC and is rated for single-pulse avalanche energy of 691 mJ. It operates with a junction and storage temperature range of -55 °C to +150 °C and has a maximum power dissipation of 250 W. Thermal resistance from junction to case is 0.5 °C/W. The part is lead-free and halogen-free, conforming to the designated ordering format.