N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC
Manufacturer: Vishay
Win Source Part Number: 1249907-SIHG24N65E-G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: SiHG24N65E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 122nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2740pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): SPW24N60C3CKSA1; STW37N60DM2AG; STFW42N60M2-EP;
Introduction Date: September 26, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
650V 24A N-Channel MOSFET TO-247AC Product overview: SIHG24N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG24N65E-GE3 can be used for catalog matching and distributor lookup.
Power MOSFET, N Channel, 24 A, 650 V, 0.12 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET 650V Vds 30V Vgs TO-247AC
MOSFET N-CH 650V 24A TO247AC
MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIHG24N65E-GE3-ND | 1249907-SIHG24N65E-GE3 | 278-SIHG24N65E-GE3 | 19X1939 | SIHG24N65E-GE3 | SIHG24N65E-GE3 | 880-SIHG24N65E-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG24N65E-GE3 | N-Channel 650V 24A MOSFET Transistor | Power Mosfet, N Channel, 24 A, 650 V, 0.12 Ohm, 10 V, 2 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-3 | TO-247; TO-247-3 | |||
| QG | 122 nC | ||||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
