Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHFBE30STRL-GE3

N-Channel power MOSFET in D2PAK (TO-263) package for surface mount applications, rated at 800 V drain-source voltage, 4.1 A continuous drain current at 25 °C, and 125 W maximum power dissipation. Features include a maximum on-resistance of 3.0 Ω at Vₒₓ = 10 V, repetitive avalanche capability with 13 mJ energy, and a dynamic dV/dt rating of 2.0 V/ns. The device supports fast switching and simple drive requirements, with thermal resistance from junction to case of 1.0 °C/W and junction-to-ambient of 62 °C/W when mounted on a standard PCB.