Vishay Intertechnology, Inc. 800V 4.1A MOSFET Transistor SIHFBE30S-GE3

Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK T/R Product overview: SIHFBE30S-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHFBE30S-GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1216371-SIHFBE30S-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHFBE30S-GE3CT,742-SIHFBE30S-GE3DKR,742-SIHFBE30S-GE3TR
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)