MOSFET N-CH 500V 20A TO220AB
MOSFET N-CH 500V 20A TO220AB Product overview: SIHFB20N50K-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHFB20N50K-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1249816-SIHFB20N50K-
Manufacturer Homepage: www.vishay.com
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
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MOSFET N-CH 500V 20A TO220AB
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHFB20N50K-E3 | 278-SIHFB20N50K-E3 | 1249816-SIHFB20N50K-E3 | SIHFB20N50K-E3-ND | SIHFB20N50K-E3 | SIHFB20N50K-E3 | 880-SIHFB20N50K-E3 |
| Product Name | Single FETs, MOSFETs | 500V 20A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHFB20N50K-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 500V 20A TO220AB |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| IDSS | 20000 milliamps | ||||||
| PD | 280000 milliwatts | 280 milliwatts | 280000 milliwatts |
