Manufacturer: Vishay
Win Source Part Number: 1096426-SIHF7N60E-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 680pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): SPA07N60C3; SiHF7N60E-GE3; TSM60N600CI C0G;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
MOSFET N-CH 600V 7A TO220
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096426-SIHF7N60E-E3 | SIHF7N60E-E3-ND | SIHF7N60E-E3 | SIHF7N60E-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF7N60E-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 31000 milliwatts |
