Vishay Precision Group MOSFET SIHF30N60E-E3

Description
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Description
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Datasheet
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The SiHF30N60E-E3 is an N-channel MOSFET in a TO-220 FULLPAK package, rated for 600 V drain-source voltage and continuous drain current of 18 A at 100 °C case temperature. It features a maximum on-state resistance of 0.125 Ω at 25 °C with 10 V gate-source voltage, a total gate charge of 130 nC, and single pulse avalanche energy of 690 mJ. The device meets RoHS compliance and is lead-free. Thermal resistance from junction to case is 3.4 °C/W, and operating temperature range is -55 °C to +150 °C.

Datasheet Summary
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The SiHF30N60E-E3 is an N-channel MOSFET in a TO-220 FULLPAK package, rated for 600 V drain-source voltage and continuous drain current of 18 A at 100 °C case temperature. It features a maximum on-state resistance of 0.125 Ω at 25 °C with 10 V gate-source voltage, a total gate charge of 130 nC, and single pulse avalanche energy of 690 mJ. The device meets RoHS compliance and is lead-free. Thermal resistance from junction to case is 3.4 °C/W, and operating temperature range is -55 °C to +150 °C.

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Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHF30N60E-E3
Product Name MOSFET
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