N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
600V 21A N-Channel MOSFET TO-220 180mR Product overview: SIHF22N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 21A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF22N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096423-SIHF22N60E-G
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1920pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SIHA22N60E-E3;
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
MOSFET TRANSISTOR, N CHANNEL, 21 A, 600 V, 0.15 OHM, 10 V, 2 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 600V 21A TO220
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
MOSFET, N-CH, 600V, 21A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHF22N60E-GE3-ND | 278-SIHF22N60E-GE3 | 1096423-SIHF22N60E-GE3 | 111555276 | SIHF22N60E-GE3 | SIHF22N60E-GE3 | 19X1936 |
| Product Name | Single FETs, MOSFETs | N-Channel 600V 21A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF22N60E-GE3 | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 21A, To-220Fp; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |||
| PD | 35000 milliwatts | 35000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
