600V 7A N-CH Power MOSFET, DPAK, TO-252 Product overview: SIHD7N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD7N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 211701-SIHD7N60E-GE3
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 680pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount D-Pak
Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET N-CH 600V 7A DPAK
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHD7N60E-GE3 | 211701-SIHD7N60E-GE3 | SIHD7N60E-GE3-ND | 63W4108 | SIHD7N60E-GE3 | SIHD7N60E-GE3 |
| Product Name | 600V 7A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD7N60E-GE3 | Single FETs, MOSFETs | Power Mosfet, N Channel, 7 A, 650 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 78000 milliwatts | 78000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
