Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD4N80ET4-GE3

The SiHD4N80E is an N-channel MOSFET in a DPAK (TO-252) package, designed for high-voltage switching applications such as server power supplies, PFC, and motor drives. It has a drain-source voltage rating of 800 V, a maximum continuous drain current of 2.7 A at 150 °C, and a typical on-state resistance of 1.1 Ω at 25 °C and 10 V gate-source voltage. The device features a low gate charge of 32 nC maximum, an avalanche energy rating of 56 mJ, and operates with a junction temperature range from -55 °C to +150 °C. Thermal resistance is 1.8 °C/W junction-to-case and 62 °C/W junction-to-ambient. The part is lead-free, halogen-free, and meets RoHS standards.