Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD240N65E-GE3

The SiHD240N65E is an N-channel MOSFET designed for high-efficiency power conversion in applications such as server and telecom power supplies, switch mode power supplies, and PFC circuits. It is packaged in a DPAK (TO-252) case and features a 650 V drain-source voltage rating, a maximum continuous drain current of 10 A at 150 °C, and a typical on-state resistance of 0.208 Ω at 10 V gate-source voltage. The device includes a Kelvin source connection to reduce gate noise and is rated for 36 mJ single-pulse avalanche energy. Its operating junction and storage temperature range is -55 °C to +150 °C. Thermal resistance from junction to case is 0.6 °C/W, and junction-to-ambient is 62 °C/W. The part is lead-free and halogen-free, compliant with Rohs and green marking requirements.