Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD186N60EFT4-GE3

The SiHD186N60EF is an N-channel MOSFET in a DPAK (TO-252) package designed for high-efficiency power conversion applications such as server and telecom power supplies, SMPS, PFC, and motor drives. It has a 600 V drain-source breakdown voltage, a typical on-state resistance of 0.175 Ω at 25 °C with 10 V gate drive, and a maximum continuous drain current of 19 A at 25 °C. The device features a fast body diode with a reverse recovery time of 113 to 226 ns and is rated for 68 mJ in single-pulse avalanche energy. The maximum power dissipation is 156 W, with a junction-to-case thermal resistance of 0.8 °C/W and an operating junction temperature range of -55 °C to +150 °C. The package is lead-free and halogen-free, consistent with the ordering options listed for the series.