Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD180N60ET1-GE3

The SiHD180N60ET1-GE3 is an N-channel MOSFET in a DPAK (TO-252) package, designed for high-efficiency switching applications such as server power supplies, SMPS, and PFC circuits. It features a drain-source voltage rating of 600 V, a maximum continuous drain current of 19 A at 25 °C, and a typical on-state resistance of 0.170 Ω at 10 V gate-source voltage. The device is rated for single-pulse avalanche energy of 88 mJ and operates over a junction temperature range of -55 °C to +150 °C. Its total gate charge is specified up to 32 nC, with low effective output capacitance to reduce switching losses. The package dimensions conform to the TO-252AA standard, and the component is lead-free and halogen-free, meeting RoHS compliance.