Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB6N80AE-GE3

The SiHB6N80AE is an N-channel MOSFET in a D2PAK (TO-263) package for use in switch mode power supplies, power factor correction, and industrial applications. It has a drain-source voltage rating of 800 V, a typical on-state resistance of 0.826 Ω at 25 °C and 10 V gate-source voltage, and a maximum gate charge of 22.5 nC. The device includes an integrated Zener diode for ESD protection and is rated for single pulse avalanche energy of 20.3 mJ. The package is lead-free and halogen-free. Thermal resistance from junction to case is 2 °C/W, and the operating temperature range is -55 °C to +150 °C.