Win Source Part Number: 1277866-SIHB6N65E-GE
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHB6N65E-GE3CT,SIHB
Base Product Number: SIHB6
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 650V 7A D2PAK
Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET |
| Product Number | 1277866-SIHB6N65E-GE3 | SIHB6N65E-GE3-ND | SIHB6N65E-GE3 | SIHB6N65E-GE3 | 19X1932 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Power Mosfet, N Channel, 7 A, 650 V, 0.5 Ohm, 10 V, 2 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel |
