Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB35N60ET1-GE3

The SiHB35N60E is an N-channel MOSFET designed for switch mode power supplies, power factor correction, and industrial applications such as motor drives and photovoltaic inverters. It is packaged in a D2PAK (TO-263) case. The device has a drain-source voltage rating of 600 V, a typical on-state resistance of 0.082 Ω at 10 V gate-source voltage, and a maximum gate charge of 132 nC. It supports a continuous drain current of 20 A at a junction temperature of 150 °C and has a single pulse avalanche energy rating of 691 mJ. The operating junction and storage temperature range is from -55 °C to +150 °C.